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FQP20N06L - N-Channel MOSFET

General Description

Drain Current ID=21A@ TC=25℃ Drain Source Voltage- : VDSS=60V(Min) Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed swi

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID IDM PD Drain-Source Voltage Gate-Source Voltage Drain Current-continuous@ TC=25℃ Pulse Drain Current Power Dissipation @TC=25℃ Tj Max.