Datasheet Summary
isc N-Channel Mosfet Transistor
- Features
- Drain Current
- ID= 12A@ TC=25℃
- Drain Source Voltage-
: VDSS= 600V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.65Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Designed for high efficiency switch mode power supply.
-...
