FQU10N20 - N-Channel MOSFET

Datasheet Summary

Features

Drain Source Voltage- : VDSS= 200V(Min).
Low On-Resistance : RDS(on) = 0.36Ω(Max).
100% Avalanche Tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	FQU10N20
Manufacturer	INCHANGE
File Size	235.40 KB
Description	N-Channel MOSFET
Datasheet	FQU10N20 Datasheet
Additional preview pages of the FQU10N20 datasheet.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.36Ω(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case FQU10N20 VALUE 200 ±30 7.6 30 55 150 -55~150 UNIT V V A A W ℃ ℃ MAX 2.

Published: Oct 8, 2020 |