FRM230
FEATURES
- 8A, 200V, RDS(on) = 0.5Ω
- Second Generation Rad Hard MOSFET Results
From New Design Concepts
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate(GAMMA DOT) exposure.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±20
Drain Current-continuous@ TC=25℃
Drain Current-continuous@ TC=100℃
Drain Current-Single Plused
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to...
