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FRM230 - N-Channel MOSFET

Key Features

  • 8A, 200V, RDS(on) = 0.5Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor FRM230 ·FEATURES ·8A, 200V, RDS(on) = 0.5Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate(GAMMA DOT) exposure.