Inchange Semiconductor FRM240
N-Channel MOSFET Transistor
FEATURES
●16A, 200V, RDS(on) = 0.24Ω●Second Generation Rad Hard MOSFET Results From New Design Concepts
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 16 A ID Drain Current-continuous@ TC=100℃ 10 A IDM Drain Current-Single Plused 48 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website: 1 isc & iscsemi...