Datasheet Details
| Part number | FW26025A1 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.75 KB |
| Description | PNP Transistor |
| Datasheet | FW26025A1-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | FW26025A1 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.75 KB |
| Description | PNP Transistor |
| Datasheet | FW26025A1-INCHANGE.pdf |
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·High DC Current Gain- : hFE = 5000(Min)@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak -40 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.5 A 160 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.09 ℃/W FW26025A1 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor FW26025A1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 -100 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -20A ,IB= -200mA VBE(sat)* Base-Emitter Saturation Voltage IC= -20A ,IB= -200mA V BE(on)* Base-Emitter On Voltage IC= -10A ;
VCE= -3V ICEO Collector Cutoff current VCE= -50V, IB= 0 VCE= -100V, IB= 0 ICEV Collector Cutoff current(VBE=-1.5V) VCE= -100V, IB= 0,Tc=150℃ IEBO Emitter Cutoff Current VEB= -5V;
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| Brand Logo | Part Number | Description | Manufacturer |
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FW26025A1 | PNP POWER DARLINGTON TRANSISTOR | STMicroelectronics |
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