Datasheet Details
| Part number | GSRU15040 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 205.84 KB |
| Description | NPN Transistor |
| Datasheet |
 GSRU15040 Datasheet
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| Part number | GSRU15040 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.84 KB |
| Description | NPN Transistor |
| Datasheet |
GSRU15040 Datasheet
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·High DC Current Gain- : hFE= 10(MIN)@IC= 15A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Supplies ·Switching Amplifiers ·Inverters/Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 20 A ICM Peak Collector Current 30 A IB Base Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W GSRU15040 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=15A;
IB=3A VBE(sat) Base-Emitter Saturation Voltage IC=15A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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GSRU15040 | (GSRU15030 - GSRU15040) High Power NPN Transistors | General Semiconductor |
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GSRU15040A | (GSRU15030 - GSRU15040) High Power NPN Transistors | General Semiconductor |
| Part Number | Description |
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