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GSRU15040 - NPN Transistor

Description

High DC Current Gain- : hFE= 10(MIN)@IC= 15A Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Supplies Switching Amplifiers Inverters/Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM

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    isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 10(MIN)@IC= 15A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Supplies ·Switching Amplifiers ·Inverters/Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 20 A ICM Peak Collector Current 30 A IB Base Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
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