H1061 Overview
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.0A;.
Datasheet Details
| Part number | H1061 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.08 KB |
| Description | NPN Transistor |
| Datasheet | H1061-INCHANGE.pdf |
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