H1061 Description
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.0A;.
- Part: H1061
- Manufacturer: Inchange Semiconductor (official site)
- Size: 193.08 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
PMC-Sierra |
H1061 | TRIPLE DIFFUSED SILICON NPN TRANSISTOR |