H5N3011P - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-3PN packaging.
High speed switching.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

H5N3011P n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	H5N3011P
Manufacturer	Inchange Semiconductor
File Size	253.21 KB
Description	N-Channel MOSFET
Datasheet	H5N3011P Datasheet

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor H5N3011P ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 176 PD Total Dissipation 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.83 UNIT ℃/W isc website：www.iscsemi.