HLP5305 Datasheet P-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc P-Channel MOSFET Transistor HLP5305.

Datasheet Details

Part number	HLP5305
Manufacturer	Inchange Semiconductor
File Size	260.43 KB
Description	P-Channel MOSFET
Datasheet	HLP5305-INCHANGE.pdf

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -31 A IDM Drain Current-Single Pluse -62 A PD Total Dissipation @TC=25℃ 96 W TJ Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Key Features

Drain Current.
ID= -31A@ TC=25℃.
Drain Source Voltage- : VDSS= -55V(Min).
Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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