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HUFA75545P3 Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor HUFA75545P3.

General Description

·Drain Current ID=75A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in applications such as switching Regulators,switching converters, motor drivers and Relay drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max.

Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 80 V ±20 V 75 A 270 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal Resistance,Junction to Case MAX UNIT 0.55 ℃/W isc website:.iscsemi.

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