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HUFA75545P3 - N-Channel MOSFET

General Description

Drain Current ID=75A@ TC=25℃ Drain Source Voltage- : VDSS=80V(Min) Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as switching Regul

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor HUFA75545P3 DESCRIPTION ·Drain Current ID=75A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in applications such as switching Regulators,switching converters, motor drivers and Relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max.