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IDP08E65D2 - Ultrafast Rectifier

Key Features

  • With TO-220 packaging.
  • Metal silicon junction, majority carrier conduction.
  • Low power loss, high efficiency.
  • Guardring for overvoltage protection.
  • High surge capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Ultra fast Rectifier INCHANGE Semiconductor IDP08E65D2 FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS VR IF(AV) IFRM IFSM PD Tj Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 650 V Average Rectified Forward Current @Tc=25℃ Tc=100℃ 16 8 A Repetitive Peak Surge Current (Square Wave) 24 A Nonrepetitive Peak Surge Current 8.