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Ultrafast Recovery Diode
INCHANGE Semiconductor
IDP20E65D2
FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching power supplies and other power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
650
V
IF(AV) IFSM TJ
Average Rectified Forward Current
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
120
A
wave, single phase, tp=8.
IDP20E65D2 Datasheet
