IPA083N10N5 - N-Channel MOSFET

Datasheet Summary

Features

With To-220F package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPA083N10N5
Manufacturer	INCHANGE
File Size	196.98 KB
Description	N-Channel MOSFET
Datasheet	IPA083N10N5 Datasheet
Additional preview pages of the IPA083N10N5 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 44 32 176 PD Total Dissipation @TC=25℃ 36 Tj Max.

Published: Sep 3, 2020 |