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IPA086N10N3 Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

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Overview

isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 ·.

Key Features

  • Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max).
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

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Infineon Logo IPA086N10N3 MOSFET Infineon
Infineon Technologies Logo IPA086N10N3G MOSFET Infineon Technologies

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