IPA60R160C6
FEATURES
- With TO-220F packaging
- High speed switching
- Very high mutation ruggedness
- Easy to use
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operationz
- APPLICATIONS
- Switching applications
INCHANGE Semiconductor
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
23.8 15
Total Dissipation
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.67 80
UNIT ℃/W ℃/W isc website：.iscsemi.cn...
