IPA60R190P6
IPA60R190P6 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- Drain Source Voltage-
: VDSS=500V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.19Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±20
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
20.2 12.7
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150...
