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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA60R450E6
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±20
9.2 5.8
26
PD
Total Dissipation @TC=25℃
30
Tj
Max.
IPA60R450E6 Datasheet
