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INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F Package ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.66Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
6 3.8
A
IDM
Drain Current-Single Pulsed
17
A
PD
Total Dissipation @TC=25℃
28
W
Tj
Max.
IPA65R660CFD Datasheet
