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isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current ID= 120A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Designed for high current, high speed switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
150
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
120
A
ID(puls)
Pulse Drain Current
480
A
Ptot
Total Dissipation@TC=25℃
313
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.
IPB048N15N5LF Datasheet
