IPB072N15N3G - N-Channel MOSFET

Datasheet Summary

Features

With To-263(D2PAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPB072N15N3G
Manufacturer	INCHANGE
File Size	254.28 KB
Description	N-Channel MOSFET
Datasheet	IPB072N15N3G Datasheet
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Isc N-Channel MOSFET Transistor IPB072N15N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 100 93 400 PD Total Dissipation @TC=25℃ 300 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.

Published: Oct 5, 2020 |