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IPB073N15N5 Datasheet PDF

Inchange Semiconductor IPB073N15N5

N-Channel MOSFET

Part No. IPB073N15N5
Datasheet IPB073N15N5 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET
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IPB073N15N5 datasheet page 1 preview

FEATURES

●With TO-263(D2PAK) packaging
●Very low reverse recovery charge
●High speed switching
●Very low on-resistence
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operationz
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APPLICATIONS

●Switching applications INCHANGE Semiconductor IPB073N15N5
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ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 114 81 456 PD Total Dissipation 214 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.7 62 UNIT ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB073N15N5

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...
IPB073N15N5 page 2 preview