Datasheet Details
| Part number | IPB080N03L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 238.46 KB |
| Description | N-Channel MOSFET |
| Download | IPB080N03L Download (PDF) |
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| Part number | IPB080N03L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 238.46 KB |
| Description | N-Channel MOSFET |
| Download | IPB080N03L Download (PDF) |
|
|
|
·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 50 A ID(puls) Pulse Drain Current 350 A Ptot Total Dissipation 47 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W IPB080N03L .
isc N-Channel MOSFET Transistor ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPB080N03L | Power-Transistor | Infineon |
|
IPB080N03LG | Power-Transistor | Infineon |
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