IPB65R190C6
IPB65R190C6 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- With To-263(D2PAK) package
- Low input capacitance and gate charge
- Low gate input resistance
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
20.2 12.8
Total Dissipation @TC=25℃
Tch
Max. Operating Junction Temperature
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.83 62
UNIT ℃/W ℃/W isc website：.iscsemi.cn
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Isc N-Channel MOSFET...
