Datasheet Details
| Part number | IPB65R190C7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 251.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPB65R190C7-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IPB65R190C7 ·.
| Part number | IPB65R190C7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 251.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPB65R190C7-INCHANGE.pdf |
|
|
|
·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max.
Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.73 UNIT ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IPB65R190C7 | MOSFET | Infineon |
| Part Number | Description |
|---|---|
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