IPB65R190C7 Description
·Ultra low gate charge ·High peak current capability ·Improved transconductance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max. Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...
IPB65R190C7 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Ultra low gate charge -High peak current capability -Improved transconductance