IPB65R225C7
FEATURES
- Static drain-source on-resistance:
RDS(on) ≤0.225Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRIPTION
- Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
Gate-Source Voltage
±20
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
- THERMAL CHARACTERISTICS
SYMBOL...
