IPB65R225C7 Description
·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 41 A PD Total Dissipation @TC=25℃ 63 W Tj Max. ID =1mA VGS(th) Gate Threshold Voltage...
IPB65R225C7 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching super junction MOSFET