Datasheet Details
| Part number | IPB65R225C7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 265.83 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPB65R225C7-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | IPB65R225C7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 265.83 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPB65R225C7-INCHANGE.pdf |
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·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 41 A PD Total Dissipation @TC=25℃ 63 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.99 ℃/W IPB65R225C7 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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IPB65R225C7 | MOSFET | Infineon |
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