IPB65R225C7 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPB65R225C7
Manufacturer	INCHANGE
File Size	265.83 KB
Description	N-Channel MOSFET
Datasheet	IPB65R225C7 Datasheet
Additional preview pages of the IPB65R225C7 datasheet.

Product details

Description

Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 41 A PD Total Dissipation @TC=25℃ 63 W Tj Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature

Features

Static drain-source on-resistance: RDS(on) ≤0.225Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 28, 2020 |