Download IPD031N03L Datasheet PDF
IPD031N03L page 2
Page 2

Datasheet Summary

isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L - Features - Static drain-source on-resistance: RDS(on)≤3.1mΩ - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Fast switching -...