IPD082N10N3 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤8.2mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IPD082N10N3 N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IPD082N10N3

Datasheet Details

Part number	IPD082N10N3
Manufacturer	Inchange Semiconductor
File Size	238.45 KB
Description	N-Channel MOSFET
Datasheet	IPD082N10N3 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 125 Tj Max.

Published: Oct 8, 2020 |