IPD088N06N3
IPD088N06N3 is N-Channel MOSFET manufactured by Inchange Semiconductor.
isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3
- Features
- Static drain-source on-resistance:
RDS(on)≤8.8mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High frequency switching
-...
