IPD60R2K1CE
Key Features
- Static drain-source on-resistance: RDS(on)≤2.1Ω
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast switching
- Part: IPD60R2K1CE
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 237.92 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD60R2K0C6 | Infineon | MOSFET |
| IPD60R280P7 | Infineon | Power-Transistor |
| IPD60R210PFD7S | Infineon | 600V MOSFET |