IPD60R360P7S
Key Features
- Static drain-source on-resistance: RDS(on)≤0.36Ω
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Suitable for hard and soft switching
- Part: IPD60R360P7S
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 237.83 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD60R360P7S | Infineon | MOSFET |
| IPD60R360P7 | Infineon | 600V MOSFET |