Inchange Semiconductor IPD60R650CE
N-Channel MOSFET
| Part No. | IPD60R650CE |
|---|---|
| Datasheet | IPD60R650CE Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on)≤0.65Ω●Enhancement mode:
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Fast switching
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.9 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25℃ 82 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.52 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.2mA RDS(on) Drain-Sou...