IPD65R250E6
Key Features
- Static drain-source on-resistance: RDS(on)≤0.25Ω
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Very high mutation ruggedness
- Part: IPD65R250E6
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 238.14 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD65R250E6 | Infineon | MOSFET |
| IPD65R250C6 | Infineon | MOSFET |