Datasheet Summary
isc N-Channel MOSFET Transistor
IPD65R660CFD,IIPD65R660CFD
- Features
- Static drain-source on-resistance:
RDS(on)≤0.66Ω
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High mutation ruggedness
-...
