IPD65R660CFD - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤0.66Ω.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPD65R660CFD
Manufacturer	Inchange Semiconductor
File Size	237.55 KB
Description	N-Channel MOSFET
Datasheet	IPD65R660CFD Datasheet
Additional preview pages of the IPD65R660CFD datasheet.

📁 Similar Datasheet

IPD65R660CFD - Power Transistor (Infineon Technologies)
IPD65R660CFDA - MOSFET (Infineon Technologies)
IPD65R600C6 - Power Transistor (Infineon Technologies)
IPD65R600E6 - MOSFET (Infineon Technologies)
IPD65R650CE - MOSFET (Infineon)
IPD65R190C7 - MOSFET (Infineon)
IPD65R1K0CE - MOSFET (Infineon)
IPD65R1K4C6 - MOSFET (Infineon)
IPD65R1K4CFD - MOSFET (Infineon)
IPD65R1K5CE - MOSFET (Infineon)

Other Datasheets by INCHANGE

IPD65R600C6 - N-Channel MOSFET
IPD65R600E6 - N-Channel MOSFET
IPD65R650CE - N-Channel MOSFET
IPD65R190C7 - N-Channel MOSFET
IPD65R1K0CE - N-Channel MOSFET
IPD65R1K4C6 - N-Channel MOSFET
IPD65R1K4CFD - N-Channel MOSFET
IPD65R1K5CE - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.66Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 17 PD Total Dissipation @TC=25℃ 63 Tj Max.

Published: Oct 8, 2020 |