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IPI12CN10NG - N-Channel MOSFET

Datasheet Summary

Features

  • With To-262 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPI12CN10NG
Manufacturer INCHANGE
File Size 251.75 KB
Description N-Channel MOSFET
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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 67 48 A IDM Drain Current-Single Pulsed 268 A PD Total Dissipation @TC=25℃ 125 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.2 UNIT ℃/W IPI12CN10NG isc website：www.iscsemi.
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