IPI180N10N3 - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤18mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IPI180N10N3
Manufacturer	INCHANGE
File Size	256.65 KB
Description	N-Channel MOSFET
Datasheet	IPI180N10N3 Datasheet
Additional preview pages of the IPI180N10N3 datasheet.

📁 Similar Datasheet

IPI180N10N3 - Power-Transistor (Infineon)
IPI180N10N3G - Power-Transistor (Infineon)
IPI100N04S3-03 - OptiMOS-T Power-Transistor (Infineon Technologies)
IPI100N04S4-H2 - OptiMOS-T2 Power-Transistor (Infineon Technologies)
IPI100N06S3-03 - Power-Transistor (Infineon Technologies)
IPI100N06S3L-03 - Power-Transistor (Infineon Technologies)
IPI100N08N3 - Power-Transistor (Infineon)
IPI100N08N3G - Power-Transistor (Infineon)
IPI100N08S2-07 - Power-Transistor (Infineon Technologies)
IPI100N10S3-05 - Power-Transistor (Infineon Technologies)

Other Datasheets by INCHANGE

IPI100N08N3 - N-Channel MOSFET
IPI110N20N3 - N-Channel MOSFET
IPI111N15N3 - N-Channel MOSFET
IPI12CN10NG - N-Channel MOSFET
IPI147N12N3 - N-Channel MOSFET
IPI16CN10N - N-Channel MOSFET
IPI030N10N3 - N-Channel MOSFET
IPI037N08N3 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI180N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤18mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 172 PD Total Dissipation @TC=25℃ 71 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.

Published: Oct 29, 2020 |