IPI320N20N3 Datasheet (PDF) Download
Inchange Semiconductor
IPI320N20N3

Key Features

  • Static drain-source on-resistance: RDS(on) ≤32mΩ
  • Enhancement mode
  • Fast Switching Speed
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Ideal for high-frequency switching and synchronous rectification