IPI50R199CP
FEATURES
- With To-262(I2PAK) package
- Low input capacitance and gate charge
- Low gate input resistance
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
Total Dissipation
Tj
Operating Junction Temperature
Tstg
Storage Temperature
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c)
Channel-to-case thermal resistance
Rth(ch-a)
Channel-to-ambient thermal resistance
VALUE 500 ±30 17 11 40 139
-55~150 -55~150
UNIT V V A A W ℃ ℃
MAX 0.9 62
UNIT ℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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