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IPI50R350CP - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on) ≤0.35Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPI50R350CP
Manufacturer INCHANGE
File Size 282.80 KB
Description N-Channel MOSFET
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.35Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 89 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.4 UNIT ℃/W IPI50R350CP isc website：www.iscsemi.
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