IPI60R165CP Description
· Ultra low gate charge · High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 61 PD Total Dissipation @TC=25℃ 192 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case MAX...
IPI60R165CP Key Features
- Static drain-source on-resistance
- DESCRIPTION
- Ultra low gate charge
- High peak current capability