Datasheet Details
| Part number | IPI60R250CP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.42 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI60R250CP-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | IPI60R250CP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.42 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI60R250CP-INCHANGE.pdf |
|
|
|
·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 104 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.2 UNIT ℃/W IPI60R250CP isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPI60R250CP | CoolMOS Power Transistor | Infineon Technologies AG |
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