IPI60R280C6 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPI60R280C6
Manufacturer	INCHANGE
File Size	282.34 KB
Description	N-Channel MOSFET
Datasheet	IPI60R280C6 Datasheet
Additional preview pages of the IPI60R280C6 datasheet.

IPI60R280C6 Product details

Description

Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13.8 A IDM Drain Current-S

Features

Static drain-source on-resistance: RDS(on) ≤0.28Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 28, 2020 |