Datasheet Details
| Part number | IPI60R280C6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI60R280C6-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | IPI60R280C6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.34 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI60R280C6-INCHANGE.pdf |
|
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|
·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13.8 A IDM Drain Current-Single Pulsed 40 A PD Total Dissipation @TC=25℃ 104 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.2 ℃/W IPI60R280C6 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPI60R280C6 | MOSFET | Infineon Technologies AG |
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