Download IPI60R280C6 Datasheet PDF
IPI60R280C6 page 2
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IPI60R280C6 Description

·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13.8 A IDM Drain Current-Single Pulsed 40 A PD Total Dissipation @TC=25℃ 104 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS...

IPI60R280C6 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Provide all benefits of a fast switching super junction MOS while not