IPI60R299CP - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPI60R299CP
Manufacturer	INCHANGE
File Size	282.50 KB
Description	N-Channel MOSFET
Datasheet	IPI60R299CP Datasheet
Additional preview pages of the IPI60R299CP datasheet.

IPI60R299CP Product details

Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 34 A PD Total Dissipati

Features

Static drain-source on-resistance: RDS(on) ≤0.299Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

IPI60R299CP - CoolMOS Power Transistor (Infineon Technologies)
IPI60R250CP - CoolMOS Power Transistor (Infineon Technologies AG)
IPI60R280C6 - MOSFET (Infineon Technologies AG)
IPI60R099CP - Power-Transistor (Infineon)
IPI60R099CPA - Power Transistor (Infineon Technologies)
IPI60R125CP - CoolMOS Power Transistor (Infineon Technologies)
IPI60R165CP - Power Transistor (Infineon Technologies)
IPI60R190C6 - MOSFET (Infineon)
IPI60R199CP - CoolMOS Power Transistor (Infineon Technologies)
IPI60R380C6 - MOSFET (Infineon Technologies)

Other Datasheets by INCHANGE

IPI60R250CP - N-Channel MOSFET
IPI60R280C6 - N-Channel MOSFET
IPI60R099CP - N-Channel MOSFET
IPI60R125CP - N-Channel MOSFET
IPI60R165CP - N-Channel MOSFET
IPI60R190C6 - N-Channel MOSFET
IPI60R199CP - N-Channel MOSFET
IPI60R380C6 - N-Channel MOSFET

Published: Oct 28, 2020 |