IPI60R380C6 Datasheet | Inchange Semiconductor

FEATURES - With To-262(I2PAK) package - Low input capacitance and gate charge - Low gate input resistance - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation Tj Operating Junction Temperature Tstg Storage Temperature - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance INCHANGE Semiconductor VALUE 600 ±30 10.6 6.7 30 83 -55~150 -55~150 UNIT V V A A W ℃ ℃ MAX 1.5 62 UNIT ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor ELECTRICAL CHARACTERISTICS...