Description
Ultra low gate charge - High peak current capability - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.8 IDM Drain Current-Single Pulsed 17 PD Total Dissipation @TC=25℃ 66 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case MAX 1.9 UNIT ℃/W IPI60R520CP isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.25mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=3.8A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=3.8A; VGS = 0V IPI60R520CP MIN TYP MAX UNIT 600 V 2.5 3.5 V 0.52 Ω 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on) ≤0.52Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
