IPI65R110CFD Description
·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 31.2 A IDM Drain Current-Single Pulsed 99.6 A PD Total Dissipation @TC=25℃ 277.8 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL...
IPI65R110CFD Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while offering