Download IPI65R380C6 Datasheet PDF
IPI65R380C6 page 2
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IPI65R380C6 Description

·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 10.6 A IDM Drain Current-Single Pulsed 29 A PD Total Dissipation @TC=25℃ 83 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL...

IPI65R380C6 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while not