Datasheet Details
| Part number | IPI65R600C6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 281.81 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI65R600C6-INCHANGE.pdf |
|
|
Overview: isc N-Channel MOSFET Transistor ·.
| Part number | IPI65R600C6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 281.81 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI65R600C6-INCHANGE.pdf |
|
|
|
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 63 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.0 UNIT ℃/W IPI65R600C6 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IPI65R600C6 | Power Transistor | Infineon Technologies |
| Part Number | Description |
|---|---|
| IPI65R660CFD | N-Channel MOSFET |
| IPI65R099C6 | N-Channel MOSFET |
| IPI65R110CFD | N-Channel MOSFET |
| IPI65R150CFD | N-Channel MOSFET |
| IPI65R190C6 | N-Channel MOSFET |
| IPI65R190CFD | N-Channel MOSFET |
| IPI65R190E6 | N-Channel MOSFET |
| IPI65R280C6 | N-Channel MOSFET |
| IPI65R280E6 | N-Channel MOSFET |
| IPI65R310CFD | N-Channel MOSFET |