IPI65R660CFD Overview
·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pulsed 17 A PD Total Dissipation @TC=25℃ 62.5 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL...
IPI65R660CFD Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while offering
