Download IPI70R950CE Datasheet PDF
IPI70R950CE page 2
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IPI70R950CE Description

·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 68 W Tj Max. Operating Junction Temperature -40~150 ℃ Tstg Storage Temperature -40~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL...

IPI70R950CE Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while not